Date: Fri, 21 Nov 1997 05:02:30 GMT Server: BESTWWWD/2.1 MIME-version: 1.0 Content-Type: text/html Content-Length: 16711 Last-modified: Fri, 21 Nov 1997 05:02:30 GMT Accept-Ranges: bytes IMP Standard Process Capabilities

IMP, Inc.


IMP Standard Process Capabilities

Last Edit October 19, 1997

Process Technology Overview

IMP CMOS Processes cover a wide range of operating voltages from 1.5V up to 100V.
All processes are available with double poly and double metal layers.

Process / Parameters
Technology		 5.0 Micron
CMOS		 3.0 Micron
CMOS		 1.2 Micron
CMOS
BiCMOS
EEPROM		 1.2 Micron
High
Voltage		 1.0 Micron
CMOS		 0.8 Micron
CMOS
Well Type Both P-well N-well N-well N-well N-well
Poly Layers Single/Double Single/Double Single/Double Single/Double Single/Double Single/Double
Poly Width/Space (µm) 5.0/2.5 3.0/2.5 1.5/2.0 1.0/1.4 1.0/1.4 0.8/1.0
Metal Layers Single/Double Single/Double Single/Double Single/Double Single/Double Single/Double
Metal 1 Width/Space (µm) 5.0/3.0 3.5/2.5 2.5/1.5 2.5/1.5 1.4/1.2 1.4/1.0
Metal 2 Width/Space (µm) 7.0/3.0 5.0/3.0 2.5/1.5 2.5/1.5 2.0/1.4 1.4/1.1
Contact (µm) 3.0x3.0 2.0x2.0 1.5x1.5 1.5x1.5 1.2x1.2 0.8x0.8
Via (µm) 3.0x3.0 2.0x2.0 1.5x1.5 1.5x1.5 1.2x1.2 0.8x0.8
Operating Voltage (V) 15/10 10/5/3 15/5/3 100/5 5/3 5/3
Gate Oxide Thickness (A) 1,080 500 250 240 210 170
Field Oxide Thickness (A) 13,000 8,000 8,000 8,000 7,000 4,500
Conduction Factor-N 26 47 75 78 87 95
Conduction Factor-P 9.0 17 25 25 28 31
BV DSSN (min) (V) 20 12 18/7/7 100/5 7 7
BV DSSP (min) (V) -20 -12 -18/-7/-7 -100/15 -7 -7
Process C5014 C3017 C1202 C1226 C1004 C0809

Process Technology Summary

Click on the process name to download or open the PDF specification datasheet. [Browser dependent.]

Process capability
Process
# Poly
Layers		# Metal
Layers		 # MasksWell Digital Analog BiCMOS E2 High
Voltage		High p
poly		 Low
Voltage		Comments
C0809 2 2 15 N. . . . . . . .
C0810(TBD) 2 2 16 N. . . . .   . High Res. Poly
C1004 1 2 12 N. .. . . . . Gate Array
C1012 1 2 14 N. .. . . . . NCR Equipment
C1015 2 2 14N. . . . . . . Telecom Products
C1017 1 2 13 N. .. . . . . .
C1026 2 2 20N. . . . . . . 5V BiCMOS, 5V/12V CMOS
Schottky, Low TCR Poly
C1201 1 2 11 N. .. . . . . .
C1202 2 2 12 N. . . . . . . .
C1203 2 2 14 N. . . . . . . Low Cost - 1 GHz
C1206 2 2 15 N. . . . . . . 6.8 GHz
C1209 2 2 14 N. . . . . . EECMOS
C1210 2 2 14 N. . . . . . . Zero VT Devices
C1211 (TBD) 1 2 11 N. . . . . . . NSC Compatible
C1212 2 2 16 N. . . . . . . 12 Volt
C1215 2 2 13 N. . . . . . . Low Threshold Voltage
C1216 2 2 15 N. .. . . . . 15 Volt
C1219 2 2 17 N. . . . . . . .
C1221 2 2 18 N. . . . . . . .
C1225 (TBD) 1 2 16N. . . . . . 5V BiCMOS
C1226 2 2 19N. . . . . . . 100V
C1227 2 2 19N. . . . . . . 30V BiCMOS
C1601 2 2 13 N. . . . . . . Telecom Products
C3013 2 1 10 P. . . . . . . 10 Volt
C3015 1 1 9 P. . . . . . . 10 Volt
C3017 2 2 12 P. . . . . . . 10 Volt
C3025 2 1 9 P. . . . . . . 10 Volt
C5014 2 1 11 P . . . . . . . 15 Volt RCA Equivalent
(TBD) means the datasheet is not currently on-line. It is available by calling IMP.

Wafer Fabrication

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